针对Flash写前需擦除，读写I/O开销不均衡等固有缺陷，研究面向闪存缓冲区管理，对提高基于Flash的固态硬盘（Solid State Disk，SSD）访问性能具有重要理论意义和应用价值. 通过分析SSD关键技术及现有缓冲区管理算法，实现了一种适用于SSD的基于写数据页聚簇缓冲算法. 文章中详细介绍了该算法关键技术及原理，并通过FlashSim仿真平台实现SSD写缓冲. 基于仿真结果与传统缓冲算法性能比对，分析得出该缓冲算法可降低SSD随机写次数和SSD数据存储分散性，并提升SSD响应速度.
For the inherent characteristics of flash memory such as erase before write, the I/O overhead of reading and writing unbalance, and so on, studying the buffer management of flash memory has important theoretical significance and application value to improve access performance of Flash-based SSD (Solid State Disk, SSD). Analyzing of the key technologies of SSD and the existing buffer management algorithm, it has implemented a buffer algorithm used for SSD, which is based on the cluster of writing pages. The key technology and the principle of the algorithm has been described in detail, and the writing of SSD buffer management is implemented on basis of Flashsim platform. Compared the performances of traditional buffer algorithm and the new algorithm, it indicates that the buffer algorithm based on the cluster of write page can reduce the random write times and the data dispersion of SSD and improve the average response rate of SSD.